SiFotonics Ge/Si avalanche photodiodes utilize separate absorption, charge and multiplication (SACM) structure to achieve excellent absorption efficiency, high gain and low noise factor, simultaneously, benefitting from high responsivity of germanium to near-infrared light and low k-factor of Si as multiplication layer. SiFotonics focuses on designing state-of-the-art Ge/Si APDs featuring solidity, uniformity and superb reliability. Our 2.5 Gb/s and 10Gb/s Ge/Si APDs are mass-produced at standard CMOS foundry. SiFotonics Ge/Si APDs have lower temperature dependence owing to incorporating Si as avalanche material, compared with traditional InP or InAlAs materials, and is able to operating over a wide temperature range from -40°C to 85°C. All SiFotonics Ge/Si APDs can be customized, including optimal wavelength, data rate, array size and array pitch.
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