Germanium-on-silicon technology is the new driving technology to manufacture near-infrared (0.8um to 1.6um) photodiodes instead of InGaAs material for the fields of telecommunications, metro networks and FTTHs. This technology has an overwhelming superiority in mass production and uniformity, owing to compatibility with CMOS manufacturing process. After years’ research and development, SiFotonics Ge/Si PIN photodiodes have been optimized for best performance, including high responsivity, fast response, low capacitance and low bias voltage. The product portfolio covers speeds from 10 Gb/s to 25 Gb/s. All SiFotonics Ge/Si PD devices can be customized, including optimal wavelength, data rate, array size and array pitch.
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