Ge/Si Avalanche Photodiodes

SiFotonics high speed Ge/Si APDs demonstrate world record performance at multiple data rates and various communication wavelengths. Besides ultrahigh sensitivity, Ge/Si APDs show very good linearity and are ideal for advanced modulation schemes such as PAM4. SiFotonics Ge/Si APDs main features include:  

    • Multiple data rate applications: 25Gb/s, 10G/s and 2.5Gb/s      

    • Multiple wavelength applications: 850/1310/1490/1550/1577-nm

    • Good linearity for advanced modulation schemes such as PAM4

Ge/Si PIN Photodiodes

Germanium-on-silicon technology is the new driving technology to manufacture near-infrared (0.85um to 1.6um) photodiodes instead of InGaAs material for the fields of telecommunications, metro networks and FTTHs. This technology has an overwhelming superiority in mass production and uniformity, owing to compatibility with CMOS manufacturing process:

   • Optimized responsivity for 850/1310/1490/1550/1577-nm    

   • Top-illuminated structure for ease of packaging    

   • Multiple data rate applications of 10Gb/s, 25Gb/s

Ge/Si PIN/APD Arrays

By fully exploiting CMOS processing technology for the manufacturing of highly uniform PIN PDs and APDs, SiFotonics is able to deliver detector array bare die chips:

   • Optimized responsivity for 850/1310/1490/1550/1577-nm    

   • Optional array pitch in stock: 250/500/750-um  

   • Optional array size in stock: 1x4, 1x8, 1x10, 1x12    

   • Customizable array pitch and array size    

   • Customizable pad pattern for ease of packaging

SOI-based photonics integrated circuits

The network bandwidth is growing at staggering rates driven by the massive data flow of mobiles, clouds and videos. Silicon-on-insulator (SOI) based photonics integrated circuits (PICs) have been the killer technology to meet the lower-cost and smaller-footprint demands of optical modules. SiFotonics has built state-of-the-art platform of 100G photonics integration for both long-haul and datacenter applications, including components of wide-band edge couplers, 28Gb/s Si modulators, polarization rotator/splitter, 90° hybrid mixers, 32Gb/s waveguide PDs and passive components with low insertion loss. Lately, SiFotonics have successfully developed 100G DP-QPSK integrated coherent receiver (ICR) chips and 100G PSM4 chips with high performance and high integrity.


Different kinds of SERDES with wide range data rate have been developed, utilizing optical fiber for the transmission of signals with data rate over 5Gb/s instead of copper wire. SiFotonics has the world’s leading 10G SERDES technology, with which extreme low bit error rate (BER) can be achieved with most optical modules. SiFotonics has begun to deliver its first chipset for HDMI active optical cable (HDMI AOC). By fully understanding of HDMI Spec, SiFotonics’ demo system is compatible to almost all the commercial HDMI sources and sinks on the market.

10G Transceiver ICs – TIAs and Laser Driver

SiFotonics has developed a series of 10G IC integrating Laser/VSCEL driver, limiting amplifier (LA) and MCU into a tiny 5mm x 5mm QFN32 package for active optical cable (AOC) applications, to settle the package size limitation in traditional SFP+. It can be used not only for traditional SFP+, PON SFP+, but also suitable to be used in AOC which requires small size package.

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