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AP1003-40M9


AP1003-40M9 is a 2.5 Gb/s germanium on silicon avalanche photodiode for PON applications.


Features

  • Top-illuminated device for ease of assembly

  • Both P and N pads on top side

  • Low breakdown voltage of 30 V

  • Low capacitance of 0.25 pF

  • Responds to an 800nm - 1600nm wavelength range

  • AR coating optimized for 1490nm applications

  • Typical responsivity at 1490 nm is 0.85 A/W @ M=1

  • Optical illumination aperture 40 μm

Applications

  • PON



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